vishay mmbz...vda and c series document number 85808 rev. 1.2, 30-jan-04 vishay semiconductors www.vishay.com 1 12 3 12 3 common cathode common anode mmbz15vdc mmbz27vdc mmbz15vda mmbz27vda 18654 dual zener transient voltage suppressor diodes for esd protection features ? dual silicon planar zener diodes with common cathode or common anode configurations. dual package provides for bidirectional or sepa- rate unidirectional configurations. the dual configurations protect two separate lines with only one device. peak power: 40 w @1 ms (bidirectional) . high temperature soldering guaranteed: 230 c for 10 seconds. ideal for esd protection. for bidirectional operation, circuit connected to pins 1 and 2. for unidirectional operation, circuit connected to pins 1 and 3 or pins 2 and 3. mechanical data case: sot-23 plastic package weight: approx. 0.008g terminals: solderable per mil-std-750, method 2026 packaging codes/options: gs18/ 10 k per 13 " reel (8 mm tape), 10 k/box gs08/ 3 k per 7 " reel (8 mm tape), 15 k/box marking: mmbz15vdc = tc5 mmbz27vdc = tc7 mmbz6v8dc = ? mmbz15vda = ta5 mmbz27vda = ta7 mmbz6v8da = ? absolute maximum ratings t amb = 25 c, unless otherwise specified 1) nonrepetitive current pulse per figure 2 and derate above t amb = 25 c per figure 3. 2) fr-5 = 1.0 x 0.75 x 0.62 in. 3) alumina = 0.4 x 0.3 x 0.024 in., 99.5 % alumina. 4) the mmbz6v8dc/a is rated at 24 v. thermal characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit peak power dissipation 1) p pk 40 4) w power dissipation on fr-5 board 2) t amb = 25 c derate above 25 c p tot 225 1.8 mw mw/c power dissipation on alumina substrate 3) t amb = 25 c derate above 25 c p tot 300 2.4 mw mw/c parameter test condition symbol value unit thermal resistance junction to ambiant air r ja 556 c/w operating and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com 2 document number 85808 rev. 1.2, 30-jan-04 vishay mmbz...vda and c series vishay semiconductors electrical characteristics note: 1) v br measured at pulse test current i t at an ambient temperature of 25 c 2) surge current waveform per figure 2 and derate per figure 3 typical characteristics (t amb = 25 c unless otherwise specified) partnumber breakdown voltage 1) test current working peak reverse voltage max. reverse leakage current max. reverse surge current max. reverse voltage (clamping voltage) max. temperature coefficient max. forward voltage v br at i t i t v rwm i r i pp v c @ i rsm 2) at v br v f @ i f v ma v na a v mv/c v ma min max mmbz6.8vda 6.48 7.14 1.0 4.5 500 2.5 9.6 3.4 1.1 200 mmbz15vda 14.30 15.80 1.0 12.8 100 1.9 21.2 16 0.9 200 mmbz27vda 56.65 28.35 1.0 22.0 80 1.0 38.0 30 1.1 200 figure 1. steady state power derating curve figure 2. pulse waveform 0 25 5 0 7 5 1 00 1 25 1 50 1 75 50 0 300 100 150 2 00 250 p tot , power dissipation (mw) alumina substrate fr-5 board t, temperature ( c) 18655 100 50 0 0 1 2 3 4 value(%) t, time (ms) t r tp peak value - i rsm half value - rsm i 2 pulse width (tp) is defined as that point where the peak current decays to 50%ofi tr 10 s rsm 18656 figure 3. pulse derating curve 0 25 50 75 100 125 150 175 200 0 2 5 50 7 5 t a (c) ambient temperature - peak pulse derating in % of peak power or current @ t = 25z (c) a 100 18657
vishay mmbz...vda and c series document number 85808 rev. 1.2, 30-jan-04 vishay semiconductors www.vishay.com 3 package dimensions in mm (inches) 2.0 (0.079) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) 0.8 (0.031) 1 2 3 17418 2.8 (.110) 3.1 (.122) 0.4 (.016) 0.95 (.037) 0.95 (.037) max 0.1 (.004) 1.33 (.052) 1.43 (.056) 0.4 (.016) 0.4 (.016) 0.125 (.005) 0.175 (.007) 0.95 (.037) 1.15 (.045) iso method a 2.4 (.094) 2.6 (.102) mounting pad layout
www.vishay.com 4 document number 85808 rev. 1.2, 30-jan-04 vishay mmbz...vda and c series vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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